Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target
Identifieur interne : 013610 ( Main/Repository ); précédent : 013609; suivant : 013611Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn3In2O6 target
Auteurs : RBID : Pascal:00-0117845Descripteurs français
- Pascal (Inist)
- Etude expérimentale, Couche mince, Croissance cristalline en phase vapeur, Méthode ablation laser, Laser pulsé, Composé ternaire, Zinc oxyde, Indium oxyde, Propriété optique, Propriété électrique, Transmission optique, Conductivité électrique, Diffraction RX, 8115F, 6855J, 7361L, 7866L, Zn3In2O6, In O Zn.
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- KwdEn :
Abstract
Using a Zn3In2O6 target, indium-zinc oxide films were prepared by pulsed laser deposition. The influence of the substrate deposition temperature and the oxygen pressure on the structure, optical and electrical properties were studied. Crystalline films are obtained for substrate temperatures above 200°C. At the optimum substrate deposition temperature of 500°C and the optimum oxygen pressure of 10 3 mbar, both conditions that indeed lead to the highest conductivity, Zn3In2O6 films exhibit a transparency of 85% in the visible region and a conductivity of 1000 S/cm. Depositions carried out in oxygen and reducing gas, 93% Ar/7% H2, result in large discrepancies between the target stoichiometry and the film composition. The Zn/In (at.%) ratio of 1.5 is only preserved for oxygen pressures of 10 2-10 3 mbar and a 93% Ar/7% H2 pressure of 10-2 mbar. The optical properties are basically not affected by the type of atmosphere used during the film deposition, unlike the conductivity which significantly increases from 80 to 1400 S/cm for a film deposited in 10 2 mbar of O2 and in 93% Ar/ 7% H2, respectively.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn<sub>3</sub>In<sub>2</sub>O<sub>6</sub> target</title><author><name sortKey="Naghavi, N" uniqKey="Naghavi N">N. Naghavi</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 33 rue St Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Rougier, A" uniqKey="Rougier A">A. Rougier</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 33 rue St Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Marcel, C" uniqKey="Marcel C">C. Marcel</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 33 rue St Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Guery, C" uniqKey="Guery C">C. Guery</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 33 rue St Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Leriche, J B" uniqKey="Leriche J">J. B. Leriche</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 33 rue St Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author><author><name sortKey="Tarascon, J M" uniqKey="Tarascon J">J. M. Tarascon</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 33 rue St Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country>France</country><placeName><region type="region" nuts="2">Picardie</region><settlement type="city">Amiens</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0117845</idno><date when="2000">2000</date><idno type="stanalyst">PASCAL 00-0117845 INIST</idno><idno type="RBID">Pascal:00-0117845</idno><idno type="wicri:Area/Main/Corpus">013945</idno><idno type="wicri:Area/Main/Repository">013610</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Crystal growth from vapors</term><term>Electrical conductivity</term><term>Electrical properties</term><term>Experimental study</term><term>Indium oxides</term><term>Laser ablation technique</term><term>Optical properties</term><term>Optical transmission</term><term>Pulsed lasers</term><term>Ternary compounds</term><term>Thin films</term><term>XRD</term><term>Zinc oxides</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Etude expérimentale</term><term>Couche mince</term><term>Croissance cristalline en phase vapeur</term><term>Méthode ablation laser</term><term>Laser pulsé</term><term>Composé ternaire</term><term>Zinc oxyde</term><term>Indium oxyde</term><term>Propriété optique</term><term>Propriété électrique</term><term>Transmission optique</term><term>Conductivité électrique</term><term>Diffraction RX</term><term>8115F</term><term>6855J</term><term>7361L</term><term>7866L</term><term>Zn3In2O6</term><term>In O Zn</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Using a Zn<sub>3</sub>In<sub>2</sub>O<sub>6</sub> target, indium-zinc oxide films were prepared by pulsed laser deposition. The influence of the substrate deposition temperature and the oxygen pressure on the structure, optical and electrical properties were studied. Crystalline films are obtained for substrate temperatures above 200°C. At the optimum substrate deposition temperature of 500°C and the optimum oxygen pressure of 10 <sup>3</sup> mbar, both conditions that indeed lead to the highest conductivity, Zn<sub>3</sub>In<sub>2</sub>O<sub>6</sub> films exhibit a transparency of 85% in the visible region and a conductivity of 1000 S/cm. Depositions carried out in oxygen and reducing gas, 93% Ar/7% H<sub>2</sub>, result in large discrepancies between the target stoichiometry and the film composition. The Zn/In (at.%) ratio of 1.5 is only preserved for oxygen pressures of 10 <sup>2</sup>-10 <sup>3</sup> mbar and a 93% Ar/7% H<sub>2</sub> pressure of 10<sup>-2</sup> mbar. The optical properties are basically not affected by the type of atmosphere used during the film deposition, unlike the conductivity which significantly increases from 80 to 1400 S/cm for a film deposited in 10 <sup>2</sup> mbar of O<sub>2</sub> and in 93% Ar/ 7% H<sub>2</sub>, respectively.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>360</s2></fA05><fA06><s2>1-2</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Characterization of indium zinc oxide thin films prepared by pulsed laser deposition using a Zn<sub>3</sub>In<sub>2</sub>O<sub>6</sub> target</s1></fA08><fA11 i1="01" i2="1"><s1>NAGHAVI (N.)</s1></fA11><fA11 i1="02" i2="1"><s1>ROUGIER (A.)</s1></fA11><fA11 i1="03" i2="1"><s1>MARCEL (C.)</s1></fA11><fA11 i1="04" i2="1"><s1>GUERY (C.)</s1></fA11><fA11 i1="05" i2="1"><s1>LERICHE (J. B.)</s1></fA11><fA11 i1="06" i2="1"><s1>TARASCON (J. M.)</s1></fA11><fA14 i1="01"><s1>Laboratoire de Réactivité et Chimie des Solides, Université de Picardie Jules Verne, 33 rue St Leu</s1><s2>80039 Amiens</s2><s3>FRA</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>233-240</s1></fA20><fA21><s1>2000</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000086628930370</s5></fA43><fA44><s0>0000</s0><s1>© 2000 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>24 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>00-0117845</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>Using a Zn<sub>3</sub>In<sub>2</sub>O<sub>6</sub> target, indium-zinc oxide films were prepared by pulsed laser deposition. The influence of the substrate deposition temperature and the oxygen pressure on the structure, optical and electrical properties were studied. Crystalline films are obtained for substrate temperatures above 200°C. At the optimum substrate deposition temperature of 500°C and the optimum oxygen pressure of 10 <sup>3</sup> mbar, both conditions that indeed lead to the highest conductivity, Zn<sub>3</sub>In<sub>2</sub>O<sub>6</sub> films exhibit a transparency of 85% in the visible region and a conductivity of 1000 S/cm. Depositions carried out in oxygen and reducing gas, 93% Ar/7% H<sub>2</sub>, result in large discrepancies between the target stoichiometry and the film composition. The Zn/In (at.%) ratio of 1.5 is only preserved for oxygen pressures of 10 <sup>2</sup>-10 <sup>3</sup> mbar and a 93% Ar/7% H<sub>2</sub> pressure of 10<sup>-2</sup> mbar. The optical properties are basically not affected by the type of atmosphere used during the film deposition, unlike the conductivity which significantly increases from 80 to 1400 S/cm for a film deposited in 10 <sup>2</sup> mbar of O<sub>2</sub> and in 93% Ar/ 7% H<sub>2</sub>, respectively.</s0></fC01><fC02 i1="01" i2="3"><s0>001B80A15F</s0></fC02><fC02 i1="02" i2="3"><s0>001B60H55J</s0></fC02><fC02 i1="03" i2="3"><s0>001B70C61L</s0></fC02><fC02 i1="04" i2="3"><s0>001B70H66L</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>Etude expérimentale</s0><s5>01</s5></fC03><fC03 i1="01" i2="3" l="ENG"><s0>Experimental study</s0><s5>01</s5></fC03><fC03 i1="02" i2="3" l="FRE"><s0>Couche mince</s0><s5>02</s5></fC03><fC03 i1="02" i2="3" l="ENG"><s0>Thin films</s0><s5>02</s5></fC03><fC03 i1="03" i2="3" l="FRE"><s0>Croissance cristalline en phase vapeur</s0><s5>03</s5></fC03><fC03 i1="03" i2="3" l="ENG"><s0>Crystal growth from vapors</s0><s5>03</s5></fC03><fC03 i1="04" i2="3" l="FRE"><s0>Méthode ablation laser</s0><s5>04</s5></fC03><fC03 i1="04" i2="3" l="ENG"><s0>Laser ablation technique</s0><s5>04</s5></fC03><fC03 i1="05" i2="3" l="FRE"><s0>Laser pulsé</s0><s5>05</s5></fC03><fC03 i1="05" i2="3" l="ENG"><s0>Pulsed lasers</s0><s5>05</s5></fC03><fC03 i1="06" i2="3" l="FRE"><s0>Composé ternaire</s0><s5>07</s5></fC03><fC03 i1="06" i2="3" l="ENG"><s0>Ternary compounds</s0><s5>07</s5></fC03><fC03 i1="07" i2="3" l="FRE"><s0>Zinc oxyde</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="07" i2="3" l="ENG"><s0>Zinc oxides</s0><s2>NK</s2><s5>09</s5></fC03><fC03 i1="08" i2="3" l="FRE"><s0>Indium oxyde</s0><s2>NK</s2><s5>10</s5></fC03><fC03 i1="08" i2="3" l="ENG"><s0>Indium oxides</s0><s2>NK</s2><s5>10</s5></fC03><fC03 i1="09" i2="3" l="FRE"><s0>Propriété optique</s0><s5>11</s5></fC03><fC03 i1="09" i2="3" l="ENG"><s0>Optical properties</s0><s5>11</s5></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Propriété électrique</s0><s5>12</s5></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Electrical properties</s0><s5>12</s5></fC03><fC03 i1="11" i2="X" l="FRE"><s0>Transmission optique</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="ENG"><s0>Optical transmission</s0><s5>13</s5></fC03><fC03 i1="11" i2="X" l="SPA"><s0>Transmisión óptica</s0><s5>13</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Conductivité électrique</s0><s5>14</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Electrical conductivity</s0><s5>14</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Diffraction RX</s0><s5>15</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>XRD</s0><s5>15</s5></fC03><fC03 i1="14" i2="3" l="FRE"><s0>8115F</s0><s2>PAC</s2><s4>INC</s4><s5>56</s5></fC03><fC03 i1="15" i2="3" l="FRE"><s0>6855J</s0><s2>PAC</s2><s4>INC</s4><s5>57</s5></fC03><fC03 i1="16" i2="3" l="FRE"><s0>7361L</s0><s2>PAC</s2><s4>INC</s4><s5>58</s5></fC03><fC03 i1="17" i2="3" l="FRE"><s0>7866L</s0><s2>PAC</s2><s4>INC</s4><s5>59</s5></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Zn3In2O6</s0><s4>INC</s4><s5>92</s5></fC03><fC03 i1="19" i2="3" l="FRE"><s0>In O Zn</s0><s4>INC</s4><s5>93</s5></fC03><fC07 i1="01" i2="3" l="FRE"><s0>Composé minéral</s0><s5>06</s5></fC07><fC07 i1="01" i2="3" l="ENG"><s0>Inorganic compounds</s0><s5>06</s5></fC07><fC07 i1="02" i2="3" l="FRE"><s0>Métal transition composé</s0><s5>08</s5></fC07><fC07 i1="02" i2="3" l="ENG"><s0>Transition element compounds</s0><s5>08</s5></fC07><fN21><s1>087</s1></fN21></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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